EGing developed 8-inch solar-class monocrystalline silicon by Czochralski method with measures of improving heating system, increasing charging capacity of single furnace, modifying monocrystalline furnace, improving heating field & air current direction and optimizing crystal pulling technique, etc. EGing’s DRXF-85 mono-crystal furnace is rewarded three patents for invention featuring in reliable & stable operation, low energy consumption and environment protection. Thanks to powerful R&D capacity, sophisticated production facility and multi-years’ experience, EGing can also afford sufficient production for the whole EGing supplying chain besides taking the lead in mono-crystalline silicon rod.
　
P6″
P8″
TYPE
P
TYPE
P
Orientation
100±3°
Orientation
100±3°
Dopant
Boron
Dopant
Boron
Resistivity(ohm·cm)
0.5-2 3-6
Resistivity(ohm·cm)
0.5-6
Oxygen content(atoms/cm3)
≤1×1018
Oxygen content(atoms/cm3)
≤1×1018
Carbon content(atoms/cm3)
≤5×1016
Carbon content(atoms/cm3)
≤5×1016
Minority carrier time(μs)
10
Minority carrier time(μs)
10
Dislocation density(pcs./cm2)
＜3000
Dislocation density(pcs./cm2)
＜3000
Diameter(mm)
153~160
Diameter(mm)
209~215
Valuate diameter(mm)
153
Valuate diameter(mm)
205
1kg monocrystal ingot length(mm)
23.341
1kg monocrystal ingot length(mm)
13.001
　

Muster-Ausstellung

Muster

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Zukunftsmarkt China

China

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